Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, N. Hirashita

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


High-resolution photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) measurements have been performed on HfO2 films grown on Si(0 0 1) for ULSI ultra-thin gate insulators to elucidate the chemistry and band offsets of interfacial silicate layers. The valence-band discontinuity is determined by subtracting valence-band spectra of H-terminated Si(0 0 1) from those of the HfO2 films on Si which have a HfO 2/Hf1-xSixO2/Si double layer structure. On the other hand, the conduction-band discontinuity is clearly deduced by oxygen K-edge absorption spectra and O 1s photoelectron spectra. Consequently, two kinds of energy-band offsets of HfO2/Hf 1-xSixO2 and Hf1-xSi xO2/Si are determined separately.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Issue numberSPEC. ISS.
Publication statusPublished - 2004 Jul
Externally publishedYes


  • Band offsets
  • Gate insulator
  • HfO
  • Photoelectron spectroscopy
  • X-ray absorption spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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