Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates were investigated using high resolution angle-resolved photoelectron spectroscopy. Hf 4f and O 1 s spectra showed chemical shifts indicating the existence of a double layer structure consisting of an upper HfO2 layer and SiO2-rich Hf1-xSi xO2 lower layer. Two types of valence band offsets were determined by a double subtraction method to be 3.0 and 3.8 eV.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)