Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface

Toshio Sakurai, H. D. Hagstrum

    Research output: Contribution to journalArticlepeer-review

    188 Citations (Scopus)

    Abstract

    The chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface has been studied using ionneutralization spectroscopy and ultraviolet-photoemission spectroscopy with the help of low-energy electron diffraction and work-function measurement. Both spectroscopies showed that the dangling-bond surface state disappears when the clean surface is exposed to atomic hydrogen. Chemisorbed hydrogen produces two sharp peaks in the surface density of states at approximately -10 and -12 eV from the vacuum level. These results are in good quantitative agreement with the recent theoretical works by Appelbaum and Hamann and by Pandey.

    Original languageEnglish
    Pages (from-to)5349-5354
    Number of pages6
    JournalPhysical Review B
    Volume12
    Issue number12
    DOIs
    Publication statusPublished - 1975

    ASJC Scopus subject areas

    • Condensed Matter Physics

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