Chemical vapour deposition rate of Mo film in horizontal tubular reactor

Noboru Yoshikawa, Atsushi Kikuchi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A gas mixture consisting of MoCl5, H2 and Ar (carrier and dilute gas) was fed into an externally heated horizontal quartz tube (tubular reactor). Mo film was deposited on the inner wall of the reactor by atmospheric thermal CVD under different conditions of gas flow rate, wall (substrate) temperature and gas compositions. Film growth rate increased with the deposition temperature and the apparent activation energy was determined to be 83.5 kJ/mol in the range between 923 and 1123 K. Above 1223 K, deposits were composed of fine particles. Distribution of the film growth rate along the axial direction in the reactor was dependent on the composition of gas mixture. At high PH2, the deposition rate was high, and a peak was formed at the inlet region in the distribution. On the other hand, a flat distribution was obtained at low PH2. Deposition experiments were conducted using a tubular reactor with a shorter length and the output gas was condensed into powder, which was composed of MoCl4 and MoCl2. The fractional conversion from MoCl5 into Mo and into the condensed powder were obtained at different gas compositions. It turned out that the effect of PH2 change on the fractional conversion was larger than that of PMoCl5. Considering the compounds of the deposited powder and the variation in the growth rate distribution with the gas compositions, the role of the gas phase reaction was discussed.

Original languageEnglish
Pages (from-to)292-298
Number of pages7
JournalMaterials Transactions, JIM
Volume38
Issue number4
DOIs
Publication statusPublished - 1997 Apr

Keywords

  • Chemical vapour deposition
  • Decomposition
  • Fractional conversion
  • Gas phase reaction
  • Growth rate distribution
  • Molybdenum
  • Molybdenum chloride
  • Reaction mechanism
  • Reduction
  • Tubular reactor

ASJC Scopus subject areas

  • Engineering(all)

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