TY - JOUR
T1 - Chemical vapor deposition of mn and mn oxide and their step coverage and diffusion barrier properties on patterned interconnect structures
AU - Matsumoto, Kenji
AU - Neishi, Koji
AU - Itoh, Hitoshi
AU - Sato, Hiroshi
AU - Hosaka, Shigetoshi
AU - Koike, Junichi
PY - 2009/3/1
Y1 - 2009/3/1
N2 - Chemical vapor deposition of bis{ethylcyclopentadienyl)manganese, {EtCp)2Mn, was performed on a patterned interconnect structure to obtain a thin conformal layer with a good diffusion barrier property for advanced Si devices. Deposition of {EtCp)2Mn on SiO2 formed a conformal layer of Mn oxide within a contact hole with a uniform thickness of 3 to 4 nm. Similar conformal formation of Mn oxide was obtained on SiO2 in the vias and trenches of a dual-damascene structure. The deposition of {EtCp)2Mn on Cu, however, formed a solid solution with Cu. The solute Mn migrated toward the interface of Cu/SiO2 to form Mn oxide.
AB - Chemical vapor deposition of bis{ethylcyclopentadienyl)manganese, {EtCp)2Mn, was performed on a patterned interconnect structure to obtain a thin conformal layer with a good diffusion barrier property for advanced Si devices. Deposition of {EtCp)2Mn on SiO2 formed a conformal layer of Mn oxide within a contact hole with a uniform thickness of 3 to 4 nm. Similar conformal formation of Mn oxide was obtained on SiO2 in the vias and trenches of a dual-damascene structure. The deposition of {EtCp)2Mn on Cu, however, formed a solid solution with Cu. The solute Mn migrated toward the interface of Cu/SiO2 to form Mn oxide.
UR - http://www.scopus.com/inward/record.url?scp=62549093609&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=62549093609&partnerID=8YFLogxK
U2 - 10.1143/APEX.2.036503
DO - 10.1143/APEX.2.036503
M3 - Article
AN - SCOPUS:62549093609
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 036503
ER -