Chemical vapor deposition of mn and mn oxide and their step coverage and diffusion barrier properties on patterned interconnect structures

Kenji Matsumoto, Koji Neishi, Hitoshi Itoh, Hiroshi Sato, Shigetoshi Hosaka, Junichi Koike

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Chemical vapor deposition of bis{ethylcyclopentadienyl)manganese, {EtCp)2Mn, was performed on a patterned interconnect structure to obtain a thin conformal layer with a good diffusion barrier property for advanced Si devices. Deposition of {EtCp)2Mn on SiO2 formed a conformal layer of Mn oxide within a contact hole with a uniform thickness of 3 to 4 nm. Similar conformal formation of Mn oxide was obtained on SiO2 in the vias and trenches of a dual-damascene structure. The deposition of {EtCp)2Mn on Cu, however, formed a solid solution with Cu. The solute Mn migrated toward the interface of Cu/SiO2 to form Mn oxide.

Original languageEnglish
Article number036503
JournalApplied Physics Express
Volume2
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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