Chemical vapor deposition of mn and mn oxide and their step coverage and diffusion barrier properties on patterned interconnect structures

Chemical vapor deposition of bis{ethylcyclopentadienyl)manganese, {EtCp)2Mn, was performed on a patterned interconnect structure to obtain a thin conformal layer with a good diffusion barrier property for advanced Si devices. Deposition of {EtCp)₂Mn on SiO₂ formed a conformal layer of Mn oxide within a contact hole with a uniform thickness of 3 to 4 nm. Similar conformal formation of Mn oxide was obtained on SiO₂ in the vias and trenches of a dual-damascene structure. The deposition of {EtCp)₂Mn on Cu, however, formed a solid solution with Cu. The solute Mn migrated toward the interface of Cu/SiO2 to form Mn oxide.