Chemical vapor déposition of cu film on sic2 using cyclopentadienylcoppertriethylphosphine

Shigefusa Chichibu, Nobuhide Yoshida, Hirofumi Higuchi, Satoru Matsumoto

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Chemical vapor déposition of Cu film on Si02 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complété (111) preferred orientation for déposition températures below 450°C. From Auger électron spectroscopy measurements, no simultaneous incorporation of oxygen during the déposition has been confirmed. Relatively low température déposition is préférable to reduce the condensation of deposited Cu.

Original languageEnglish
Pages (from-to)L1778-L1780
JournalJapanese journal of applied physics
Volume31
Issue number12
DOIs
Publication statusPublished - 1992 Dec
Externally publishedYes

Keywords

  • Cu-CVD
  • Cyclopentadienylcoppertriethylphosphine
  • Metallization technique
  • Metalorganic precur-sor
  • Pyrolysis

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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