Chemical structures of the SiO2/Si interface

Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    115 Citations (Scopus)


    As a result of considerable progress in microfabrication technology for ultra-large scale integration (ULSI), it has become necessary to control oxide formation on an atomic scale in order to produce defect-free SiO2/Si interfaces. However, the possibility of forming an atomically flat interface by oxidizing an atomically flat silicon surface without introducing structural defects is not yet clarified. In this article the present understanding of chemical structures of SiO2/Si interfaces and initial stage of oxidation of silicon surfaces are reviewed.

    Original languageEnglish
    Pages (from-to)339-382
    Number of pages44
    JournalCritical Reviews in Solid State and Materials Sciences
    Issue number4
    Publication statusPublished - 1995

    ASJC Scopus subject areas

    • Materials Science(all)


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