Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

M. Oshima, S. Toyoda, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, N. Hirashita

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ultrathin SiON films formed by thermal nitridation of SiO2 films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.

Original languageEnglish
Pages (from-to)176-180
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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