Chemical-state-resolved in-depth profiles of gate-stack structures on Si studied by angular-dependent photoemission spectroscopy

S. Toyoda, J. Okabayashi, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, K. Usuda

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have investigated chemical-state-resolved in-depth profiles of SiO 2/SiN stack films using angular-dependent photoemission spectroscopy and maximum-entropy method (MEM). MEM enables to reproduce the gate-stack structure from angular-dependence of core-level spectra, and it is utilized to determine atomic concentration of the interfacial layer. In-depth profile of the SiO2/SiN stack film reveals that the SiO2 layer is distributed in the surface region and that the SiN layer is partly oxidized, which is well related to nitrogen bonding states analyzed by angular-dependence of N1 s core-level spectra.

Original languageEnglish
Pages (from-to)1619-1622
Number of pages4
JournalSurface and Interface Analysis
Volume40
Issue number13
DOIs
Publication statusPublished - 2008 Dec

Keywords

  • Angular-dependent photoemssion spectroscopy
  • Chemical- State-resolved in-depth profile
  • MEM

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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