We have investigated the interfacial chemical reaction between Al metal electrodes and Pr0.7Ca0.3MnO3 perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr0.7Ca0.3MnO3 interface show the formation of Al2O3 layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al2O 3 layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al2O 3 layers plays an important role in resistive switching characteristics.
ASJC Scopus subject areas
- Physics and Astronomy(all)