Chemical stability improvement in IGZO using selective laser annealing system

Tetsuya Goto, Kaori Saito, Fuminobu Imaizumi, Michinobu Mizumura, Akira Suwa, Hiroshi Ikenoue, Shigetoshi Sugawa

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.

Original languageEnglish
Pages (from-to)604-607
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 2017 May 212017 May 26

Keywords

  • IGZO
  • KrF excimer laser
  • Selective laser annealing
  • Wet etching stability

ASJC Scopus subject areas

  • Engineering(all)

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