Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, G. L. Liu

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Thermal stability of the Zr O2 Zr-silicateSi structure and the Zr-silicide formation were investigated by photoemission spectroscopy depending on the annealing temperature in ultrahigh vacuum. By the annealing below 860 °C, the interfacial layer thickness of the Zr-silicate decreased although the Zr O2 top layer was not affected. The annealing at 860 °C caused the interfacial Zr-silicate layer to disappear. By the annealing above 860 °C, the metallic Zr components appeared and the metallic clusters were formed. High-resolution photoemission spectra have revealed that the clusters consist of a Zr Si2 layer. Valence-band spectra depending on the annealing temperature provide us with the information about the crystallization in the Zr O2 layer.

Original languageEnglish
Pages (from-to)5959-5961
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number24
DOIs
Publication statusPublished - 2004 Dec 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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