Abstract
Thermal stability of the Zr O2 Zr-silicateSi structure and the Zr-silicide formation were investigated by photoemission spectroscopy depending on the annealing temperature in ultrahigh vacuum. By the annealing below 860 °C, the interfacial layer thickness of the Zr-silicate decreased although the Zr O2 top layer was not affected. The annealing at 860 °C caused the interfacial Zr-silicate layer to disappear. By the annealing above 860 °C, the metallic Zr components appeared and the metallic clusters were formed. High-resolution photoemission spectra have revealed that the clusters consist of a Zr Si2 layer. Valence-band spectra depending on the annealing temperature provide us with the information about the crystallization in the Zr O2 layer.
Original language | English |
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Pages (from-to) | 5959-5961 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2004 Dec 13 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)