Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

Naoka Nagamura, Yuta Kitada, Junto Tsurumi, Hiroyuki Matsui, Koji Horiba, Itaru Honma, Jun Takeya, Masaharu Oshima

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    10 Citations (Scopus)

    Abstract

    A chemical potential shift in an organic field effect transistor (OFET) during operation has been revealed by soft X-ray operando nano-spectroscopy analysis performed using a three-dimensional nanoscale electron-spectroscopy chemical analysis system. OFETs were fabricated using ultrathin (3 ML or 12 nm) single-crystalline C10-DNBDT-NW films on SiO2 (200 nm)/Si substrates with a backgate electrode and top source/drain Au electrodes, and C 1s line profiles under biasing at the backgate and drain electrodes were measured. When applying -30 V to the backgate, there is C 1s core level shift of 0.1 eV; this shift can be attributed to a chemical potential shift corresponding to band bending by the field effect, resulting in p-type doping.

    Original languageEnglish
    Article number251604
    JournalApplied Physics Letters
    Volume106
    Issue number25
    DOIs
    Publication statusPublished - 2015 Jun 22

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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