Chemical bonds at and near the SiO2/Si interface

Takeo Hattori, Takayuki Igarashi, Makoto Ohi, Hiroaki Yamagishi

    Research output: Contribution to journalArticle

    33 Citations (Scopus)

    Abstract

    The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.

    Original languageEnglish
    Pages (from-to)1436-1438
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume28
    Issue number8
    Publication statusPublished - 1989 Aug

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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