The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1989 Aug|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)