Chemical bonding states and band alignment of ultrathin aloxny/si gate stacks grown by metalorganic chemical vapor deposition

Gang He, Satoshi Toyoda, Yukihiro Shimogaki, Masaharu Oshima

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17 Citations (Scopus)

Abstract

The chemical bonding states and band alignment of ultrathin AlOxNy/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry were investigated by synchrotron radiation photoemission spectroscopy (SRPES). The depth distribution profile of the Al 2p binding energy states remained unchanged which indicates no formation of an Al-silicate layer. Judging from the deconvolution of Si 2p spectra, it was inferred that the AlOxNy/Si interface consists mainly of Si2O3and SiO2. On the basis of the valence-band spectra and photoelectron energy loss spectra, we evaluated the valence- and conduction-band offsets of AlOxNyfilms on Si in detail.

Original languageEnglish
Article number075503
JournalApplied Physics Express
Volume2
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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