Chemical bonding features of fluorine and boron in BF2+ ion implanted Si

T. Kinoshita, M. Takakura, S. Miyazaki, S. Yokoyama, M. Koyanagi, M. Hirose

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The chemical bonding configuraions of fluorine and boron atoms in BF2+ ion implanted Si network have been studied by using x-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is found that fluorine atoms in as implanted Si are mainly bonded to boron. By annealing at 900°C, BF bonds are thermally decomposed in the matrix and boron atoms are incorporated as four-fold coordinated acceptors, while fluorine atoms form thermodynamically stable SiFx bonds (x=2,3) which appear to be located in the remaining defects. It is also shown that in the Raman spectra of recrystallized Si the full width at half maximum of the TO mode peak at 520 cm-1 and the intensity of the Si-B local mode at 620 cm-1 are well correlated with the BF2+ ion dose and can be used for determining the hole concentration.

Original languageEnglish
Pages421-424
Number of pages4
DOIs
Publication statusPublished - 1990 Jan 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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    Kinoshita, T., Takakura, M., Miyazaki, S., Yokoyama, S., Koyanagi, M., & Hirose, M. (1990). Chemical bonding features of fluorine and boron in BF2+ ion implanted Si. 421-424. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, . https://doi.org/10.7567/ssdm.1990.c-10-4