Abstract
The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.
Original language | English |
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Pages (from-to) | 2349-2352 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 29 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1990 Dec |
Externally published | Yes |
Keywords
- Bf
- Chemical bonding state
- Implantation
- Infrared absorption
- Raman scattering
- X-ray photo-electron spectroscopy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)