Chemical bonding features of fluorine and boron in bf2 -ion-implanted si

Tsuyoshi Kinoshita; Masaru Takakura; Seiichi Miyazaki; Shin Yokoyama; Mitsumasa Koyanagi; Masataka Hirose

doi:10.1143/JJAP.29.L2349

Chemical bonding features of fluorine and boron in bf2 -ion-implanted si

Tsuyoshi Kinoshita, Masaru Takakura, Seiichi Miyazaki, Shin Yokoyama, Mitsumasa Koyanagi, Masataka Hirose

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.

Original language	English
Pages (from-to)	2349-2352
Number of pages	4
Journal	Japanese journal of applied physics
Volume	29
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.29.L2349
Publication status	Published - 1990 Dec
Externally published	Yes

Keywords

Bf
Chemical bonding state
Implantation
Infrared absorption
Raman scattering
X-ray photo-electron spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.29.L2349

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title = "Chemical bonding features of fluorine and boron in bf2 -ion-implanted si",

abstract = "The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.",

keywords = "Bf, Chemical bonding state, Implantation, Infrared absorption, Raman scattering, X-ray photo-electron spectroscopy",

author = "Tsuyoshi Kinoshita and Masaru Takakura and Seiichi Miyazaki and Shin Yokoyama and Mitsumasa Koyanagi and Masataka Hirose",

year = "1990",

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language = "English",

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T1 - Chemical bonding features of fluorine and boron in bf2 -ion-implanted si

AU - Kinoshita, Tsuyoshi

AU - Takakura, Masaru

AU - Miyazaki, Seiichi

AU - Yokoyama, Shin

AU - Koyanagi, Mitsumasa

AU - Hirose, Masataka

PY - 1990/12

Y1 - 1990/12

N2 - The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.

AB - The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.

KW - Bf

KW - Chemical bonding state

KW - Implantation

KW - Infrared absorption

KW - Raman scattering

KW - X-ray photo-electron spectroscopy

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

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ER -

Chemical bonding features of fluorine and boron in bf2 -ion-implanted si

Abstract

Keywords

ASJC Scopus subject areas

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