Chemical bonding features of fluorine and boron in bf2 -ion-implanted si

Tsuyoshi Kinoshita, Masaru Takakura, Seiichi Miyazaki, Shin Yokoyama, Mitsumasa Koyanagi, Masataka Hirose

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The chemical bonding configurations of fluorine and boron atoms in a BF2 -ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900oe, the BF bonds are thermally decomposed to form fourfold-coordinated acceptors as well as thermodynamically stable SiFx bonds (x= 2, 3) in the matrix.

Original languageEnglish
Pages (from-to)2349-2352
Number of pages4
JournalJapanese journal of applied physics
Issue number12
Publication statusPublished - 1990 Dec
Externally publishedYes


  • Bf
  • Chemical bonding state
  • Implantation
  • Infrared absorption
  • Raman scattering
  • X-ray photo-electron spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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