Abstract
The electronic states for normally stacked and faultily stacked layers on the GaAs{111} A, B surfaces are calculated by use of the discrete variational X α cluster method and the plane wave nonlocal pseudopotential method. The results show that chemical bondings between atoms are not as ionic in the faultily stacked layer of (111) B as they are in the (111) A case, and that on the (111) A surface more attractive Coulomb interaction energy is gained in the faulty stacking layer than in the normal stacking one. These results explain well the more frequent emergence of in-plane faults in the (111) A surface, which is well known in GaAs{111} A, B growth experiments. The total energy calculations also provide quantitative interpretation of such growth features.
Original language | English |
---|---|
Pages (from-to) | 2426-2431 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 16 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1998 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering