Chemical bonding features for faultily stacked interfaces of GaAs{111}

Jun Nakamura, Tetsuya Mishima, Moto Hisa Masui, Mineo Sawayanagi, Sung Pyo Cho, Masayasu Nishizawa, Toyoaki Eguchi, Toshiaki Osaka

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The electronic states for normally stacked and faultily stacked layers on the GaAs{111} A, B surfaces are calculated by use of the discrete variational X α cluster method and the plane wave nonlocal pseudopotential method. The results show that chemical bondings between atoms are not as ionic in the faultily stacked layer of (111) B as they are in the (111) A case, and that on the (111) A surface more attractive Coulomb interaction energy is gained in the faulty stacking layer than in the normal stacking one. These results explain well the more frequent emergence of in-plane faults in the (111) A surface, which is well known in GaAs{111} A, B growth experiments. The total energy calculations also provide quantitative interpretation of such growth features.

Original languageEnglish
Pages (from-to)2426-2431
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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