Chemical and electronic structures of Lu 2 O 3 /Si interfacial transition layer

H. Nohira, T. Shiraishi, T. Nakamura, K. Takahashi, M. Takeda, S. Ohmi, H. Iwai, T. Hattori

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Depth profiling method was used to determine the composition of transition layer (TL) formed between Lu 2 O 3 and Si(100) substrate. The conduction and valence band alignments of Lu 2 O 3 with respect to Si(100) were also determined. The deconvolution of Si 2p photoelectron spectra was verified by the compositional depth profile determined by the newly developed method.

Original languageEnglish
Pages (from-to)234-238
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30
Externally publishedYes

Keywords

  • Depth profiling
  • High-K
  • Lu O
  • Silicate
  • Transition layer
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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