Abstract
Depth profiling method was used to determine the composition of transition layer (TL) formed between Lu 2 O 3 and Si(100) substrate. The conduction and valence band alignments of Lu 2 O 3 with respect to Si(100) were also determined. The deconvolution of Si 2p photoelectron spectra was verified by the compositional depth profile determined by the newly developed method.
Original language | English |
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Pages (from-to) | 234-238 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
Publication status | Published - 2003 Jun 30 |
Externally published | Yes |
Keywords
- Depth profiling
- High-K
- Lu O
- Silicate
- Transition layer
- XPS
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films