Chemical and electronic structures of Lu                         2                         O                         3                         /Si interfacial transition layer

H. Nohira; T. Shiraishi; T. Nakamura; K. Takahashi; M. Takeda; S. Ohmi; H. Iwai; T. Hattori

doi:10.1016/S0169-4332(03)00425-2

Chemical and electronic structures of Lu ₂ O ₃ /Si interfacial transition layer

H. Nohira, T. Shiraishi, T. Nakamura, K. Takahashi, M. Takeda, S. Ohmi, H. Iwai, T. Hattori

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Depth profiling method was used to determine the composition of transition layer (TL) formed between Lu ₂ O ₃ and Si(100) substrate. The conduction and valence band alignments of Lu ₂ O ₃ with respect to Si(100) were also determined. The deconvolution of Si 2p photoelectron spectra was verified by the compositional depth profile determined by the newly developed method.

Original language	English
Pages (from-to)	234-238
Number of pages	5
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00425-2
Publication status	Published - 2003 Jun 30
Externally published	Yes

Keywords

Depth profiling
High-K
Lu O
Silicate
Transition layer
XPS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00425-2

Cite this

Nohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., & Hattori, T. (2003). Chemical and electronic structures of Lu ₂ O ₃ /Si interfacial transition layer Applied Surface Science, 216(1-4 SPEC.), 234-238. https://doi.org/10.1016/S0169-4332(03)00425-2

Chemical and electronic structures of Lu ₂ O ₃ /Si interfacial transition layer . / Nohira, H.; Shiraishi, T.; Nakamura, T. et al.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 234-238.

Research output: Contribution to journal › Article › peer-review

Nohira, H, Shiraishi, T, Nakamura, T, Takahashi, K, Takeda, M, Ohmi, S, Iwai, H & Hattori, T 2003, ' Chemical and electronic structures of Lu ₂ O ₃ /Si interfacial transition layer ', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 234-238. https://doi.org/10.1016/S0169-4332(03)00425-2

Nohira H, Shiraishi T, Nakamura T, Takahashi K, Takeda M, Ohmi S et al. Chemical and electronic structures of Lu ₂ O ₃ /Si interfacial transition layer Applied Surface Science. 2003 Jun 30;216(1-4 SPEC.):234-238. doi: 10.1016/S0169-4332(03)00425-2

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abstract = " Depth profiling method was used to determine the composition of transition layer (TL) formed between Lu 2 O 3 and Si(100) substrate. The conduction and valence band alignments of Lu 2 O 3 with respect to Si(100) were also determined. The deconvolution of Si 2p photoelectron spectra was verified by the compositional depth profile determined by the newly developed method. ",

keywords = "Depth profiling, High-K, Lu O, Silicate, Transition layer, XPS",

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note = "Funding Information: A part of this work was supported by Grant-in-Aid for Scientific Research on Priority Area (A) (No. 13025243) from the Ministry of Education, Culture, Sports, Science and Technology.",

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AU - Nohira, H.

AU - Shiraishi, T.

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AU - Ohmi, S.

AU - Iwai, H.

AU - Hattori, T.

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