Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake; S. Samukawa

doi:10.1116/1.1479737

Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma

H. Ohtake, S. Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

The charging-damage-free φ0.05 μm SiO₂ contact etching in a pulsed C₂F₄/CF₃I plasma was performed. The SiO₂ etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO₂ etching.

Original language	English
Pages (from-to)	1026-1030
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1479737
Publication status	Published - 2002 May
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 2001 Oct 1 → 2001 Oct 3

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1479737

Cite this

@article{4d181e359b9c4fc087d91dfb3f2a0a64,

title = "Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma",

abstract = "The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.",

author = "H. Ohtake and S. Samukawa",

year = "2002",

month = may,

doi = "10.1116/1.1479737",

language = "English",

volume = "20",

pages = "1026--1030",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

}

TY - JOUR

T1 - Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

AU - Ohtake, H.

AU - Samukawa, S.

PY - 2002/5

Y1 - 2002/5

N2 - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

AB - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

UR - http://www.scopus.com/inward/record.url?scp=0035998532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035998532&partnerID=8YFLogxK

U2 - 10.1116/1.1479737

DO - 10.1116/1.1479737

M3 - Conference article

AN - SCOPUS:0035998532

VL - 20

SP - 1026

EP - 1030

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this