Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake, S. Samukawa

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)


The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

Original languageEnglish
Pages (from-to)1026-1030
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2002 May
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 2001 Oct 12001 Oct 3

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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