Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake; Seiji Samukawa

doi:10.1116/1.1479737

Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma

H. Ohtake, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

Abstract

The charging-damage-free φ0.05 μm SiO₂ contact etching in a pulsed C₂F₄/CF₃I plasma was performed. The SiO₂ etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO₂ etching.

Original language	English
Pages (from-to)	1026-1030
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1479737
Publication status	Published - 2002 May 1
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 2001 Oct 1 → 2001 Oct 3

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma",

abstract = "The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.",

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AU - Samukawa, Seiji

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N2 - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

AB - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

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