Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process

Tomohiro Kubota, Takeshi Hashimoto, Yasushi Ishikawa, Seiji Samukawa, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki, Masaki Takeguchi, Kensuke Nishioka, Ichiro Yamashita

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Abstract

A defect-free nanometer-scale silicon disk (nanodisk) on thin Si O2 film was precisely fabricated by using Cl neutral beam etching of a 3.5-4-nm -thick polycrystalline silicon on 1.4-3-nm -thick underlying Si O2 with a 7-nm -diameter ferritin iron core mask. Kelvin force microscope observations revealed that nanodisks could maintain injected positive and negative charges. Additionally, Coulomb staircases were observed by I-V measurement of a nanodisk at a temperature of 25 K. These results indicate that the nanodisk fabricated in this research had a precise quantum effect structure and attained the single electron property. This process has great potential in the development of future quantum effect devices.

Original languageEnglish
Article number233127
JournalApplied Physics Letters
Volume89
Issue number23
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kubota, T., Hashimoto, T., Ishikawa, Y., Samukawa, S., Miura, A., Uraoka, Y., Fuyuki, T., Takeguchi, M., Nishioka, K., & Yamashita, I. (2006). Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process. Applied Physics Letters, 89(23), [233127]. https://doi.org/10.1063/1.2404608