Charge trapping type FinFET flash memory with Al2O3 blocking layer

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PublisherIEEE Computer Society
ISBN (Print)9781479913602
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
Duration: 2013 Oct 72013 Oct 10

Publication series

Name2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
CountryUnited States
CityMonterey, CA
Period13/10/713/10/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Liu, Y. X., Nabatame, T., Matsukawa, T., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2013). Charge trapping type FinFET flash memory with Al2O3 blocking layer. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 [6716572] (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716572