Charge trapping type FinFET flash memory with Al2O3 blocking layer

Y. X. Liu; T. Nabatame; T. Matsukawa; K. Endo; S. O'Uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; W. Mizubayashi; Y. Morita; S. Migita; H. Ota; T. Chikyow; M. Masahara

doi:10.1109/S3S.2013.6716572

Charge trapping type FinFET flash memory with Al₂O₃ blocking layer

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Original language	English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781479913602
DOIs	https://doi.org/10.1109/S3S.2013.6716572
Publication status	Published - 2013 Jan 1
Externally published	Yes
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 2013 Oct 7 → 2013 Oct 10

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	13/10/7 → 13/10/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2013.6716572

Cite this

Liu, Y. X., Nabatame, T., Matsukawa, T., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2013). Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 [6716572] (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716572

Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. / Liu, Y. X.; Nabatame, T.; Matsukawa, T. et al.

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716572 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YX, Nabatame, T, Matsukawa, T, Endo, K, O'Uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Chikyow, T & Masahara, M 2013, Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716572, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13/10/7. https://doi.org/10.1109/S3S.2013.6716572

Liu YX, Nabatame T, Matsukawa T, Endo K, O'Uchi S, Tsukada J et al. Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society. 2013. 6716572. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). https://doi.org/10.1109/S3S.2013.6716572

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