Charge trapping characteristics of variable oxide thickness tunnel barrier with SiO2/HfO2 or Al2O3/HfO 2 stacks for nonvolatile memories

Kwan Su Kim, Myung Ho Jung, Goon Ho Park, Jongwan Jung, Won Ju Cho

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1 Citation (Scopus)


Charge trapping characteristics of asymmetrical tunnel barriers consisting of different dielectric materials were investigated for application of nonvolatile memory devices. A thin HfO2 layer stacked on ultrathin SiO2 layer (SiO2/HfO2 tunnel barrier) revealed higher current sensitivity to applied gate voltage than the conventional single SiO tunnel barrier. On the other hand, the electron trapping of the tunnel barriers increased with the thickness of HfO2 layer. Thus, a thin HfO2 layer is promising for the engineered tunnel barriers, while a thick HfO2 layer is appropriate for charge trapping layers for high-integrated nonvolatile memories. Meanwhile, an ultrathin Al 2O3/HfO2 tunnel barrier also revealed good electrical characteristics and is suitable for low temperature fabrication process.

Original languageEnglish
Pages (from-to)06FD111-06FD113
JournalJapanese journal of applied physics
Issue number6 PART 2
Publication statusPublished - 2009 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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