Charge trapping by oxygen-related defects in HfO2-based High-k gate dielectrics

K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K. Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, H. Kitajimai, K. Yamada, T. Arikado

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

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Engineering & Materials Science