Charge trapping by oxygen-related defects in HfO2-based High-k gate dielectrics

K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K. Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, H. Kitajimai, K. Yamada, T. Arikado

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The time-dependences of leakage currents due to electrons and holes flowing through HfO2-based high-k gate dielectric films under constant voltage stresses are investigated by a carrier separation method using field-effect transistor structures. In the case of balanced injection, some of the injected electrons were trapped near the gate, while some of the injected holes were trapped near the substrate. As a result, both leakage currents reduced. Capacitance change during the relaxation after the removal of the gate voltage stress supported the leakage current change. The relationship between the electron-/hole-trapping centers and oxygen-related defects in high-k dielectric films is discussed. 2005 IEEE.

Original languageEnglish
Title of host publication2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages648-649
Number of pages2
Publication statusPublished - 2005 Dec 15
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
Duration: 2005 Apr 172005 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CountryUnited States
CitySan Jose, CA
Period05/4/1705/4/21

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Charge trapping by oxygen-related defects in HfO<sub>2</sub>-based High-k gate dielectrics'. Together they form a unique fingerprint.

Cite this