Charge state evaluation of passivation layers for silicon solar cells by scanning nonlinear dielectric microscopy

K. Kakikawa, Y. Yamagishi, Y. Cho, K. Tanahashi, H. Takato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nano scale charge states in Al3O3 passivation layers of mono-crystalline silicon solar cells and at Al3O3/Si interface were evaluated by using scanning nonlinear dielectric microscopy (SNDM). SNDM visualized microscopic non-uniformity of dC/dV in Al2O3 passivation layers. The inhomogeneous distribution of fixed charge Qf in Al3O3 thin film and interface density of sate Dit was observed from the measurement of local CV curves obtained by super-higher order-scanning nonlinear dielectric microscopy (SHO-SNDM). Variations of Qf and Dit caused by annealing were clearly detected. Moreover, density of increased number of fixed electron by annealing was quantitatively evaluated to be 3.0×1012/cm2. It was close to the value obtained by macroscopic measurement.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPPV.11-PPV.14
ISBN (Electronic)9781538654798
DOIs
Publication statusPublished - 2018 May 25
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 2018 Mar 112018 Mar 15

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period18/3/1118/3/15

Keywords

  • Charge state
  • monocrystalline silicon solar cell
  • passivation layer
  • scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Engineering(all)

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