Charge readout of a vertical quantum dot using a laterally weakly coupled quantum dot as a detector

T. Kodera, Y. Iwai, W. G. Van Der Wiel, T. Obata, T. Hatano, S. Tarucha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have fabricated laterally coupled four-vertical-quantum-dot devices that can be used for reading out electron charge and spin information of quantum dots. In these devices, the inter-dot coupling is tunable with a coupling gate voltage and the number of electrons in each dot is tunable with a side gate voltage. We first use two of the four dots to confirm the effect of the inter-dot coupling strength on the stability diagram. We then use one of the two dots as a single electron transistor (SET) charge detector to detect the charge information of the other dot.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1434-1435
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country/TerritoryUnited States
CityOrlando, FL
Period06/8/1006/10/17

Keywords

  • Quantum dot
  • Single electron transistor

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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