Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Toshimasa Fujisawa, Yoshiro Hirayama

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

Radio-frequency (rf)-operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (∼0.1 pA).

Original languageEnglish
Pages (from-to)543-545
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number4
DOIs
Publication statusPublished - 2000 Jul 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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