Charge migration in pulse-irradiated undoped C60 powder studied with the time-resolved microwave conductivity technique

R. J.O.M. Hoofman; G. P. van der Laan; M. P. de Haas; Katsumi Tanigaki

doi:10.1016/S0379-6779(97)81159-9

Charge migration in pulse-irradiated undoped C60 powder studied with the time-resolved microwave conductivity technique

R. J.O.M. Hoofman, G. P. van der Laan, M. P. de Haas, Katsumi Tanigaki

Research output: Contribution to journal › Conference article › peer-review

Abstract

The conductivity of C60 buckminsterfullerene was studied using the pulse-radiolysis time resolved microwave conductivity (PR-TRMC) technique. Conductivity transients with disperse decay kinetics and a first half-life of 2 ns were obtained in the temperature range from 210 to 450 K. The charge carrier mobility at high temperatures (T>300 K) is thermally activated (E_a=46 meV). A minimum for the sum of the charge carrier mobilities of holes and electrons was found to be 1×10^-5 m²/Vs.

Original language	English
Pages (from-to)	2355-2356
Number of pages	2
Journal	Synthetic Metals
Volume	86
Issue number	1 -3 pt 3
DOIs	https://doi.org/10.1016/S0379-6779(97)81159-9
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3) - Snowbird, UT, USA Duration: 1996 Jul 28 → 1996 Aug 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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@article{c4fde4cc4f3942a3a39d728dc0267783,

title = "Charge migration in pulse-irradiated undoped C60 powder studied with the time-resolved microwave conductivity technique",

abstract = "The conductivity of C60 buckminsterfullerene was studied using the pulse-radiolysis time resolved microwave conductivity (PR-TRMC) technique. Conductivity transients with disperse decay kinetics and a first half-life of 2 ns were obtained in the temperature range from 210 to 450 K. The charge carrier mobility at high temperatures (T>300 K) is thermally activated (Ea=46 meV). A minimum for the sum of the charge carrier mobilities of holes and electrons was found to be 1×10-5 m2/Vs.",

author = "Hoofman, {R. J.O.M.} and {van der Laan}, {G. P.} and {de Haas}, {M. P.} and Katsumi Tanigaki",

year = "1997",

month = jan,

day = "1",

doi = "10.1016/S0379-6779(97)81159-9",

language = "English",

volume = "86",

pages = "2355--2356",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1 -3 pt 3",

note = "Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3) ; Conference date: 28-07-1996 Through 02-08-1996",

}

TY - JOUR

T1 - Charge migration in pulse-irradiated undoped C60 powder studied with the time-resolved microwave conductivity technique

AU - Hoofman, R. J.O.M.

AU - van der Laan, G. P.

AU - de Haas, M. P.

AU - Tanigaki, Katsumi

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The conductivity of C60 buckminsterfullerene was studied using the pulse-radiolysis time resolved microwave conductivity (PR-TRMC) technique. Conductivity transients with disperse decay kinetics and a first half-life of 2 ns were obtained in the temperature range from 210 to 450 K. The charge carrier mobility at high temperatures (T>300 K) is thermally activated (Ea=46 meV). A minimum for the sum of the charge carrier mobilities of holes and electrons was found to be 1×10-5 m2/Vs.

AB - The conductivity of C60 buckminsterfullerene was studied using the pulse-radiolysis time resolved microwave conductivity (PR-TRMC) technique. Conductivity transients with disperse decay kinetics and a first half-life of 2 ns were obtained in the temperature range from 210 to 450 K. The charge carrier mobility at high temperatures (T>300 K) is thermally activated (Ea=46 meV). A minimum for the sum of the charge carrier mobilities of holes and electrons was found to be 1×10-5 m2/Vs.

UR - http://www.scopus.com/inward/record.url?scp=0031072262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031072262&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(97)81159-9

DO - 10.1016/S0379-6779(97)81159-9

M3 - Conference article

VL - 86

SP - 2355

EP - 2356

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1 -3 pt 3

T2 - Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3)

Y2 - 28 July 1996 through 2 August 1996

ER -

Charge migration in pulse-irradiated undoped C60 powder studied with the time-resolved microwave conductivity technique

Abstract

ASJC Scopus subject areas

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