Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias

Hiroto Ohtake, Seiji Samukawa

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Charge build-up on a substrate is greatly reduced by using a pulse-time modulated electron cyclotron resonance generated plasma of more than 50 μs with 600 kHz radio frequency (RF) substrate bias. Negative ions are generated in the afterglow plasma due to decay in electron temperature. Low-frequency RF bias directly accelerates both negative and positive ions from the plasma onto the substrate and reduces self-bias voltage, thus reducing charge accumulation on the substrate. This method shows promise for charge-free etching processes in the production of ultra large scale integrated circuits.

Original languageEnglish
Pages (from-to)2416-2417
Number of pages2
JournalApplied Physics Letters
Volume68
Issue number17
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias'. Together they form a unique fingerprint.

  • Cite this