TY - JOUR
T1 - Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces
AU - He, Li
AU - Hasegawa, Hideki
AU - Luo, Ji kui
AU - Ohno, Hideo
N1 - Funding Information:
The present work is financially supported by a Scientific Research Grand-in-Aid for Specially Promoted Research on "The Properties of Compound Semiconductor-Insulator Interface and Its Applications" and by a Grand-in-Aid for Special Project Research on "Alloy Semiconductor Physics and Electronics" from the Ministry of Education, Science and Culture.
PY - 1988/9
Y1 - 1988/9
N2 - Based on the recently proposed disorder-induced gap state (DIGS) model for interface states, the charge-discharge dynamics of interface state continuum at insulator-semiconductor (I-S) interfaces are theoretically analyzed and compared with the experiments on InP and InGaAs MIS structures. The concept occupation boundary used in the analysis clarifies the physics involved and simplifies the simulation of complex processes. By assuming a particular type of DIGS distribution in energy and in space, the observed complex hysteresis behavior of dispersion of MIS capacitance in MIS C-V curves as well as the current drift behavior of MISFET's are completely reproduced on computer, offering a unified understanding of a wide variety of phenomena associated with I-S interfaces.
AB - Based on the recently proposed disorder-induced gap state (DIGS) model for interface states, the charge-discharge dynamics of interface state continuum at insulator-semiconductor (I-S) interfaces are theoretically analyzed and compared with the experiments on InP and InGaAs MIS structures. The concept occupation boundary used in the analysis clarifies the physics involved and simplifies the simulation of complex processes. By assuming a particular type of DIGS distribution in energy and in space, the observed complex hysteresis behavior of dispersion of MIS capacitance in MIS C-V curves as well as the current drift behavior of MISFET's are completely reproduced on computer, offering a unified understanding of a wide variety of phenomena associated with I-S interfaces.
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U2 - 10.1016/0169-4332(88)90412-6
DO - 10.1016/0169-4332(88)90412-6
M3 - Article
AN - SCOPUS:0024068495
VL - 33-34
SP - 1030
EP - 1036
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -