Abstract
An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; however, a pinning-free interface is achieved with easily-oxidizable metals. The distortion should be a serious problem for flexible electronic devices with graphene.
Original language | English |
---|---|
Article number | 253503 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2010 Jun 21 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)