Charge-carrier dynamics near the Mott-Anderson transition in molecular conductors

Jens Muller, Robert Rommel, Takahiko Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on fluctuation spectroscopy measurements as a powerful new tool to study the low-frequency dynamics of correlated charge carriers in quasi-two-dimensional molecular conductors κ-(BEDT-TTF)2X. These materials are on the verge of a Mott metal-insulator transition. In earlier studies, a diverging 1/f-type noise has been observed upon approaching the finite-temperature critical endpoint of the Mott transition accompanied by a strong shift of spectral weight to low frequency and the onset of non-Gaussian fluctuations. In this paper, we discuss first results on a sample on the metallic side of the Mott transition, which is modified by disorder induced by x-ray irradiation. Upon approaching the Anderson-type localization, a pronounced peak in the noise indicates a strong change in the dynamics of the strongly correlated charge carriers.

Original languageEnglish
Title of host publication2015 International Conference on Noise and Fluctuations, ICNF 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467383356
DOIs
Publication statusPublished - 2015 Oct 2
EventInternational Conference on Noise and Fluctuations, ICNF 2015 - Xian, China
Duration: 2015 Jun 22015 Jun 6

Publication series

Name2015 International Conference on Noise and Fluctuations, ICNF 2015

Other

OtherInternational Conference on Noise and Fluctuations, ICNF 2015
CountryChina
CityXian
Period15/6/215/6/6

Keywords

  • 1/f-noise
  • Anderson localization
  • Mott metal-insulator transition
  • low-dimensional molecular metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

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