Characterization of zinc oxide films grown by a newly developed plasma enhanced metal organic chemical vapor deposition employing microwave excited high density plasma

Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO2 and Si3N4 can be formed at low temperatures of under 500-600°C. In this study, we applied radical reaction based semiconductor manufacturing to compound semiconductor of ZnO. The characteristics of ZnO films grown by a newly developed plasma enhanced metal organic chemical vapor deposition (MOCVD) employing microwave excited high-density plasma are good. The film formed on a-plane sapphire is epitaxially oriented in c-axis direction, and the composition is similar to ZnO substrate grown by hydrothermal method. The mobility of grown film at around 400°C is 23 cm2/(V·s), and it is increased to 46 cm2/(V'S) by 700°C annealing. The carbon concentration in the films can be reduced by the selection of a zinc precursor and the optimization of process conditions. The active species of plasma are effective for the crystallization of films.

Original languageEnglish
Pages (from-to)2994-2998
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • Crystallization
  • Gallium dope
  • Microwave excited high density plasma
  • Plasma enhanced MOCVD
  • Radical reaction
  • Zinc oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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