Characterization of Ti1 - xBx films deposited by a co-sputtering method

Tatsuo Shikama, Y. Sakai, M. Fujitsuka, Y. Yamauchi, H. Shinno, M. Okada

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6 Citations (Scopus)

Abstract

Titanium boride films (Ti1 - xBx: 0.5 < x < 0.77) were deposited by the co-sputtering method onto molybdenum substrates at 870 K. A negative bias voltage was applied to the substrate during deposition of the stoichiometric TiB2 by applying an r.f. power of 0-500 W to the substrates. The soft X-ray spectroscopy and other results of characterization showed that stoichiometric TiB2 could be formed by the present co-sputtering method. The application of a negative bias voltage to substrates enhanced the crystallization of TiB2 in the films. We evaluated thermal stability, deuterium retention behaviour and sputter erosion behaviour under 2 keV deuterium ion bombardment of deposited Ti1 - xBx films as functions of their chemical composition and of applied bias voltage. The paper will be focused particularly on the effects of the application of a bias voltage.

Original languageEnglish
Pages (from-to)95-101
Number of pages7
JournalThin Solid Films
Volume164
Issue numberC
DOIs
Publication statusPublished - 1988 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Shikama, T., Sakai, Y., Fujitsuka, M., Yamauchi, Y., Shinno, H., & Okada, M. (1988). Characterization of Ti1 - xBx films deposited by a co-sputtering method. Thin Solid Films, 164(C), 95-101. https://doi.org/10.1016/0040-6090(88)90116-2