Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies

M. Gao, S. P. Tumakha, T. Onishi, S. Tsukimoto, M. Murakami, L. J. Brillson

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We have used depth-resolved cathodoluminescence and Auger electron spectroscopies, DRCLS and AES, respectively, to probe the electronic structure and the composition of Ti/Al ohmic contacts to p-type SiC on a nanometer scale. A continuous Ti-Si-C compound layer was observed using the Auger depth profile. No interfacial Al segregation was found. The secondary electron threshold technique showed a continuous decrease in work function from the p-type SiC to the Ti-Si-C compound layer. Our results support an ohmic contact mechanism by an intermediate semiconductor layer which reduces the otherwise large interfacial Schottky barrier height. DRCLS revealed a ∼2.78 eV sub-band gap transition enhanced by interfacial reaction in the near-interface SiC, suggesting the formation of additional C. or Si vacancies.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
    PublisherTrans Tech Publications Ltd
    Pages891-894
    Number of pages4
    EditionPART 2
    ISBN (Print)9780878494255
    DOIs
    Publication statusPublished - 2006 Jan 1
    EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
    Duration: 2005 Sep 182005 Sep 23

    Publication series

    NameMaterials Science Forum
    NumberPART 2
    Volume527-529
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
    CountryUnited States
    CityPittsburgh, PA
    Period05/9/1805/9/23

    Keywords

    • Auger depth profile
    • Auger electron spectroscopy
    • Cathodoluminescence
    • Ohmic contact
    • Secondary electron threshold

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Gao, M., Tumakha, S. P., Onishi, T., Tsukimoto, S., Murakami, M., & Brillson, L. J. (2006). Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 891-894). (Materials Science Forum; Vol. 527-529, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.891