Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

Yoshihiro Sugawara; Yong Zhao Yao; Yukari Ishikawa; Katsunori Danno; Hiroshi Suzuki; Takeshi Bessho; Satoshi Yamaguchi; Koichi Nishikawa; Yuichi Ikuhara

doi:10.4028/www.scientific.net/MSF.778-780.366

Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

Yoshihiro Sugawara, Yong Zhao Yao, Yukari Ishikawa, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho, Satoshi Yamaguchi, Koichi Nishikawa, Yuichi Ikuhara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A threading dislocation (TD) in 4H-SiC, which was currently interpreted as a perfect threading edge dislocation (TED) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na₂O₂ additive, was investigated using weak-beam darkfield (WBDF) and large-angle convergent-beam electron diffraction (LACBED) methods. The TD was suggested to be dissociated into a dislocation pair which can be observed in the WBDF image of g=1210. The TD, which was identified as b//[1210] by SMBXT observation, was unambiguously determined as b=1/3[1210 ] by LACBED analysis. In the case of perfect TED, it was found that the direction of Burgers vector derived from SMBXT observation corresponds to LACBED analysis.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2013
Editors	Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Publisher	Trans Tech Publications Ltd
Pages	366-369
Number of pages	4
ISBN (Print)	9783038350101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.366
Publication status	Published - 2014
Externally published	Yes
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: 2013 Sep 29 → 2013 Oct 4

Publication series

Name	Materials Science Forum
Volume	778-780
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country	Japan
City	Miyazaki
Period	13/9/29 → 13/10/4

Keywords

Burgers vector
Hexagonal SiC
Threading edge dislocation
Transmission electron microscopy
X-ray topography

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

Sugawara, Y., Yao, Y. Z., Ishikawa, Y., Danno, K., Suzuki, H., Bessho, T., Yamaguchi, S., Nishikawa, K., & Ikuhara, Y. (2014). Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 366-369). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.366

Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy. / Sugawara, Yoshihiro; Yao, Yong Zhao; Ishikawa, Yukari; Danno, Katsunori; Suzuki, Hiroshi; Bessho, Takeshi; Yamaguchi, Satoshi; Nishikawa, Koichi; Ikuhara, Yuichi.

Silicon Carbide and Related Materials 2013. ed. / Hajime Okumura; Hajime Okumura; Hiroshi Harima; Tsunenobu Kimoto; Masahiro Yoshimoto; Heiji Watanabe; Tomoaki Hatayama; Hideharu Matsuura; Yasuhisa Sano; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. p. 366-369 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugawara, Y, Yao, YZ, Ishikawa, Y, Danno, K, Suzuki, H, Bessho, T, Yamaguchi, S, Nishikawa, K & Ikuhara, Y 2014, Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy. in H Okumura, H Okumura, H Harima, T Kimoto, M Yoshimoto, H Watanabe, T Hatayama, H Matsuura, Y Sano & T Funaki (eds), Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 366-369, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 13/9/29. https://doi.org/10.4028/www.scientific.net/MSF.778-780.366

Sugawara Y, Yao YZ, Ishikawa Y, Danno K, Suzuki H, Bessho T et al. Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy. In Okumura H, Okumura H, Harima H, Kimoto T, Yoshimoto M, Watanabe H, Hatayama T, Matsuura H, Sano Y, Funaki T, editors, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd. 2014. p. 366-369. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.366

Sugawara, Yoshihiro ; Yao, Yong Zhao ; Ishikawa, Yukari ; Danno, Katsunori ; Suzuki, Hiroshi ; Bessho, Takeshi ; Yamaguchi, Satoshi ; Nishikawa, Koichi ; Ikuhara, Yuichi. / Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy. Silicon Carbide and Related Materials 2013. editor / Hajime Okumura ; Hajime Okumura ; Hiroshi Harima ; Tsunenobu Kimoto ; Masahiro Yoshimoto ; Heiji Watanabe ; Tomoaki Hatayama ; Hideharu Matsuura ; Yasuhisa Sano ; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. pp. 366-369 (Materials Science Forum).

@inproceedings{e3d83bc603d6487997f94707004bf2ea,

title = "Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy",

abstract = "A threading dislocation (TD) in 4H-SiC, which was currently interpreted as a perfect threading edge dislocation (TED) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na2O2 additive, was investigated using weak-beam darkfield (WBDF) and large-angle convergent-beam electron diffraction (LACBED) methods. The TD was suggested to be dissociated into a dislocation pair which can be observed in the WBDF image of g=1210. The TD, which was identified as b//[1210] by SMBXT observation, was unambiguously determined as b=1/3[1210 ] by LACBED analysis. In the case of perfect TED, it was found that the direction of Burgers vector derived from SMBXT observation corresponds to LACBED analysis.",

keywords = "Burgers vector, Hexagonal SiC, Threading edge dislocation, Transmission electron microscopy, X-ray topography",

author = "Yoshihiro Sugawara and Yao, {Yong Zhao} and Yukari Ishikawa and Katsunori Danno and Hiroshi Suzuki and Takeshi Bessho and Satoshi Yamaguchi and Koichi Nishikawa and Yuichi Ikuhara",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

year = "2014",

doi = "10.4028/www.scientific.net/MSF.778-780.366",

language = "English",

isbn = "9783038350101",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "366--369",

editor = "Hajime Okumura and Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",

booktitle = "Silicon Carbide and Related Materials 2013",

}

TY - GEN

T1 - Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

AU - Sugawara, Yoshihiro

AU - Yao, Yong Zhao

AU - Ishikawa, Yukari

AU - Danno, Katsunori

AU - Suzuki, Hiroshi

AU - Bessho, Takeshi

AU - Yamaguchi, Satoshi

AU - Nishikawa, Koichi

AU - Ikuhara, Yuichi

PY - 2014

Y1 - 2014

N2 - A threading dislocation (TD) in 4H-SiC, which was currently interpreted as a perfect threading edge dislocation (TED) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na2O2 additive, was investigated using weak-beam darkfield (WBDF) and large-angle convergent-beam electron diffraction (LACBED) methods. The TD was suggested to be dissociated into a dislocation pair which can be observed in the WBDF image of g=1210. The TD, which was identified as b//[1210] by SMBXT observation, was unambiguously determined as b=1/3[1210 ] by LACBED analysis. In the case of perfect TED, it was found that the direction of Burgers vector derived from SMBXT observation corresponds to LACBED analysis.

AB - A threading dislocation (TD) in 4H-SiC, which was currently interpreted as a perfect threading edge dislocation (TED) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na2O2 additive, was investigated using weak-beam darkfield (WBDF) and large-angle convergent-beam electron diffraction (LACBED) methods. The TD was suggested to be dissociated into a dislocation pair which can be observed in the WBDF image of g=1210. The TD, which was identified as b//[1210] by SMBXT observation, was unambiguously determined as b=1/3[1210 ] by LACBED analysis. In the case of perfect TED, it was found that the direction of Burgers vector derived from SMBXT observation corresponds to LACBED analysis.

KW - Burgers vector

KW - Hexagonal SiC

KW - Threading edge dislocation

KW - Transmission electron microscopy

KW - X-ray topography

UR - http://www.scopus.com/inward/record.url?scp=84896102593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896102593&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.778-780.366

DO - 10.4028/www.scientific.net/MSF.778-780.366

M3 - Conference contribution

AN - SCOPUS:84896102593

SN - 9783038350101

T3 - Materials Science Forum

SP - 366

EP - 369

BT - Silicon Carbide and Related Materials 2013

A2 - Okumura, Hajime

A2 - Harima, Hiroshi

A2 - Kimoto, Tsunenobu

A2 - Yoshimoto, Masahiro

A2 - Watanabe, Heiji

A2 - Hatayama, Tomoaki

A2 - Matsuura, Hideharu

A2 - Sano, Yasuhisa

A2 - Funaki, Tsuyoshi

PB - Trans Tech Publications Ltd

T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

Y2 - 29 September 2013 through 4 October 2013

ER -