Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

Hiroo Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, S. Nakajima

Research output: Contribution to journalArticlepeer-review

114 Citations (Scopus)

Abstract

LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×1016 to 2×1018 cm-3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust-Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.

Original languageEnglish
Pages (from-to)354-358
Number of pages5
JournalJournal of Applied Physics
Volume61
Issue number1
DOIs
Publication statusPublished - 1987 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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