Abstract
Thallium bromide (TlBr) has been regarded as candidate detector materials for the gamma-ray spectrometers operating at room temperature. In this study, a simple and rapid method, the filter method, was performed to purify a raw TlBr material used for fabrication of TlBr detectors. The material was loaded on shards of crashed quartz and installed in a Pyrex tube, and was melted using a furnace. A purified material passing through interspaces of the shards of quartz was collected in a quartz ampoule located at the outlet of the Pyrex tube. After the purification, impurities colored black extracted from the raw material remained. TlBr crystals were then grown by the travelling molten zone method both from the raw material and the purified material. TlBr detectors were fabricated from the grown crystals, and were characterized by measuring mobility-lifetime products (μ τ) for carriers and gamma-ray spectra (137 Cs) at room temperature. μ τ for electrons of a TlBr detector fabricated from the purified material was around 5 times higher than that of a detector fabricated from the raw material.
Original language | English |
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Article number | 6585806 |
Pages (from-to) | 3833-3836 |
Number of pages | 4 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 60 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 Oct 25 |
Keywords
- Compound semiconductors
- filter method
- semiconductor radiation detectors
- thallium bromide (TlBr)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering