Characterization of surface defects of highly n-doped 4H-SiC substrates that produce dislocations in the epitaxial layer

Yukari Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai, N. Shibata, T. Hirayama, Y. Ikuhara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The structures of defects that form different types of etch pits on highly N-doped 4H-SiC substrates, that were produced by a sublimation method, after molten KOH etching were characterized. It was found that most of the dislocations in the epitaxial layer originated from defects at the surface of substrate whose etch pit structures were clearly different from the conventional structures. The etch pits were classified into drop, oval, round and caterpillar pits. The drop and oval pits were concluded to be formed by the deformation of conventional etch pits. Round pits were concluded to originate from half loop dislocations and were transformed to complex dislocations by epitaxial growth. Analysis by transmission electron microscopy measurement indicates that slipped edge dislocations (or screw dislocations) on the basal plane form caterpillar pits.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages351-354
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period09/10/1109/10/16

Keywords

  • Caterpillar pit
  • Dislocation
  • KOH etching
  • SiC
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Characterization of surface defects of highly n-doped 4H-SiC substrates that produce dislocations in the epitaxial layer'. Together they form a unique fingerprint.

Cite this