Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement

K. Hirose, K. Sakano, K. Takahashi, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)

    Abstract

    We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO2 film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO2 film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO2 film is increasing. The complex hole/electron trap phenomena in ultrathin SiO2 film can be explained by a trap generation model of the SiO2 film during X-ray irradiation.

    Original languageEnglish
    Pages (from-to)906-910
    Number of pages5
    JournalSurface Science
    Volume507-510
    DOIs
    Publication statusPublished - 2002 Jun

    Keywords

    • Crystalline-amorphous interfaces
    • Insulating films
    • Oxidation
    • Semiconductor-insulator interfaces
    • Silicon
    • Silicon oxides
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Characterization of SiO<sub>2</sub>/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement'. Together they form a unique fingerprint.

    Cite this