Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement

K. Hirose; K. Sakano; K. Takahashi; T. Hattori

doi:10.1016/S0039-6028(02)01370-5

Characterization of SiO₂/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement

K. Hirose, K. Sakano, K. Takahashi, T. Hattori

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO₂ film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO₂ film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO₂ film is increasing. The complex hole/electron trap phenomena in ultrathin SiO₂ film can be explained by a trap generation model of the SiO₂ film during X-ray irradiation.

Original language	English
Pages (from-to)	906-910
Number of pages	5
Journal	Surface Science
Volume	507-510
DOIs	https://doi.org/10.1016/S0039-6028(02)01370-5
Publication status	Published - 2002 Jun

Keywords

Crystalline-amorphous interfaces
Insulating films
Oxidation
Semiconductor-insulator interfaces
Silicon
Silicon oxides
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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@article{abd05438ab474a88937aecf0d0a8b3a0,

title = "Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement",

abstract = "We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO2 film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO2 film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO2 film is increasing. The complex hole/electron trap phenomena in ultrathin SiO2 film can be explained by a trap generation model of the SiO2 film during X-ray irradiation.",

keywords = "Crystalline-amorphous interfaces, Insulating films, Oxidation, Semiconductor-insulator interfaces, Silicon, Silicon oxides, X-ray photoelectron spectroscopy",

author = "K. Hirose and K. Sakano and K. Takahashi and T. Hattori",

note = "Funding Information: The authors are grateful to M. Oshima, H. Fujioka, and Y. Hagimoto for our fruitful discussions. This work was supported by the Ministry of Education, Science, Sports, and Culture through a 1999–2000 grant-in-aid for Science Research (B-1) (no. 10450020).",

year = "2002",

month = jun,

doi = "10.1016/S0039-6028(02)01370-5",

language = "English",

volume = "507-510",

pages = "906--910",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

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TY - JOUR

T1 - Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement

AU - Hirose, K.

AU - Sakano, K.

AU - Takahashi, K.

AU - Hattori, T.

N1 - Funding Information: The authors are grateful to M. Oshima, H. Fujioka, and Y. Hagimoto for our fruitful discussions. This work was supported by the Ministry of Education, Science, Sports, and Culture through a 1999–2000 grant-in-aid for Science Research (B-1) (no. 10450020).

PY - 2002/6

Y1 - 2002/6

N2 - We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO2 film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO2 film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO2 film is increasing. The complex hole/electron trap phenomena in ultrathin SiO2 film can be explained by a trap generation model of the SiO2 film during X-ray irradiation.

AB - We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO2 film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO2 film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO2 film is increasing. The complex hole/electron trap phenomena in ultrathin SiO2 film can be explained by a trap generation model of the SiO2 film during X-ray irradiation.

KW - Crystalline-amorphous interfaces

KW - Insulating films

KW - Oxidation

KW - Semiconductor-insulator interfaces

KW - Silicon

KW - Silicon oxides

KW - X-ray photoelectron spectroscopy

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DO - 10.1016/S0039-6028(02)01370-5

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VL - 507-510

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EP - 910

JO - Surface Science

JF - Surface Science

SN - 0039-6028

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