Abstract
We report the results of the X-ray photoelectron spectroscopy (XPS) time-dependent measurement of expanded X-ray irradiation times ranging from 1 to 10,000 min. It was found that the Si 2p peak binding energy of a Si substrate covered with an ultrathin SiO2 film first increases, then decreases, and again increases during X-ray irradiation. A shift toward a higher binding energy indicates that the amount of positive charge in the SiO2 film is increasing, and a shift toward a lower binding energy indicates the amount of negative charge in the SiO2 film is increasing. The complex hole/electron trap phenomena in ultrathin SiO2 film can be explained by a trap generation model of the SiO2 film during X-ray irradiation.
Original language | English |
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Pages (from-to) | 906-910 |
Number of pages | 5 |
Journal | Surface Science |
Volume | 507-510 |
DOIs | |
Publication status | Published - 2002 Jun |
Keywords
- Crystalline-amorphous interfaces
- Insulating films
- Oxidation
- Semiconductor-insulator interfaces
- Silicon
- Silicon oxides
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry