Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

G. Devès, Shigeo Matsuyama, Y. Barbotteau, Keizo Ishii, R. Ortega

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3 MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Original languageEnglish
Article number056102
JournalReview of Scientific Instruments
Volume77
Issue number5
DOIs
Publication statusPublished - 2006 Jan 1

ASJC Scopus subject areas

  • Instrumentation

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