Characterization of P+ implanted SiO2 powders

Kenji Kajiyama; Yasuo Suzuki; Tadashi Kokubo; Masakazu Kawashita; Fumiaki Miyaji

Characterization of P⁺ implanted SiO₂ powders

Kenji Kajiyama, Yasuo Suzuki, Tadashi Kokubo, Masakazu Kawashita, Fumiaki Miyaji

Research output: Contribution to conference › Paper › peer-review

Abstract

³¹P ions were implanted into high-purity SiO₂ sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×10¹⁷/cm² dose utilizing a modified medium-current implanter and, for reference, into SiO₂ plate at 200 keV with 1.0×10¹⁸/cm² utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs⁺ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.

Original language	English
Pages	816-819
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA Duration: 1996 Jun 16 → 1996 Jun 21

Other

Other	Proceedings of the 1996 11th International Conference on Ion Implantation Technology
City	Austin, TX, USA
Period	96/6/16 → 96/6/21

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{1758b7757a054511a422543ad6f47878,

title = "Characterization of P+ implanted SiO2 powders",

abstract = "31P ions were implanted into high-purity SiO2 sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.",

author = "Kenji Kajiyama and Yasuo Suzuki and Tadashi Kokubo and Masakazu Kawashita and Fumiaki Miyaji",

year = "1996",

language = "English",

pages = "816--819",

note = "Proceedings of the 1996 11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

TY - CONF

T1 - Characterization of P+ implanted SiO2 powders

AU - Kajiyama, Kenji

AU - Suzuki, Yasuo

AU - Kokubo, Tadashi

AU - Kawashita, Masakazu

AU - Miyaji, Fumiaki

PY - 1996

Y1 - 1996

N2 - 31P ions were implanted into high-purity SiO2 sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.

AB - 31P ions were implanted into high-purity SiO2 sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.

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M3 - Paper

AN - SCOPUS:0030369709

SP - 816

EP - 819

T2 - Proceedings of the 1996 11th International Conference on Ion Implantation Technology

Y2 - 16 June 1996 through 21 June 1996

ER -

Characterization of P⁺ implanted SiO₂ powders

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