Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Ko Noguchi, Seiji Samukawa, Hiroto Ohtake, Tomonori Mukai

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

Several characterization methods were used to quantify the charging damage of metal-oxide-semiconductor (MOS) devices with gate oxide thicknesses of 1.9-6.0 nm by metal and dielectric etching. Results were compared, and damage monitoring methods appropriate for each plasma process and oxide thickness range were investigated. In addition, as a process solution to the charging problem, pulse-time-modulated (TM) plasmas were applied to several types of etching equipment.

Original languageEnglish
Pages (from-to)1431-1436
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number4 I
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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