Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Ko Noguchi; Seiji Samukawa; Hiroto Ohtake; Tomonori Mukai

doi:10.1116/1.582366

Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Ko Noguchi, Seiji Samukawa, Hiroto Ohtake, Tomonori Mukai

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Several characterization methods were used to quantify the charging damage of metal-oxide-semiconductor (MOS) devices with gate oxide thicknesses of 1.9-6.0 nm by metal and dielectric etching. Results were compared, and damage monitoring methods appropriate for each plasma process and oxide thickness range were investigated. In addition, as a process solution to the charging problem, pulse-time-modulated (TM) plasmas were applied to several types of etching equipment.

Original language	English
Pages (from-to)	1431-1436
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582366
Publication status	Published - 2000 Jul 1
Externally published	Yes
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 1999 Oct 25 → 1999 Oct 29

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma. / Noguchi, Ko; Samukawa, Seiji; Ohtake, Hiroto; Mukai, Tomonori.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 4 I, 01.07.2000, p. 1431-1436.

Research output: Contribution to journal › Conference article › peer-review

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AU - Ohtake, Hiroto

AU - Mukai, Tomonori

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AB - Several characterization methods were used to quantify the charging damage of metal-oxide-semiconductor (MOS) devices with gate oxide thicknesses of 1.9-6.0 nm by metal and dielectric etching. Results were compared, and damage monitoring methods appropriate for each plasma process and oxide thickness range were investigated. In addition, as a process solution to the charging problem, pulse-time-modulated (TM) plasmas were applied to several types of etching equipment.

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Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Abstract

ASJC Scopus subject areas

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