Abstract
Several characterization methods were used to quantify the charging damage of metal-oxide-semiconductor (MOS) devices with gate oxide thicknesses of 1.9-6.0 nm by metal and dielectric etching. Results were compared, and damage monitoring methods appropriate for each plasma process and oxide thickness range were investigated. In addition, as a process solution to the charging problem, pulse-time-modulated (TM) plasmas were applied to several types of etching equipment.
Original language | English |
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Pages (from-to) | 1431-1436 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 18 |
Issue number | 4 I |
DOIs | |
Publication status | Published - 2000 Jul 1 |
Externally published | Yes |
Event | 46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 1999 Oct 25 → 1999 Oct 29 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films