Characterization of polysilicon thin films for MEMS applications

Dan O. Macodiyo, Hitoshi Soyama, Kazuo Hayashi

Research output: Contribution to journalArticlepeer-review

Abstract

The microstructure of thin polycrystalline films formed by molecular beam epitaxy (MBE) has been studied by transmission electron microscopy (TEM). Beneficial compressive residual stress was introduced by cavitation impacts. Surface morphology was characterized using atomic force microscopy (AFM). The films show two distinct microstructural regimes at the low and high end with an intermediate transition region. Homogeneous nucleation and growth in the bulk of the films were observed. Numerous planar twins are observed on the lower end while the polysilicon films has a highly textured columnar microstructure. The textured grains had rough edges. Both homogeneous nucleation and growth in the bulk of the films and heterogeneous nucleation and growth in the film-substrate interface are observed. The main defects have been identified as dislocations and microtwins. The locations of the dislocations are also discussed.

Original languageEnglish
Pages (from-to)2418-2423
Number of pages6
JournalWSEAS Transactions on Systems
Volume5
Issue number10
Publication statusPublished - 2006 Oct 1

Keywords

  • Cavitation
  • Defects
  • Molecular beam epitaxy
  • Polysilicon film
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Computer Science Applications

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