TY - JOUR
T1 - Characterization of planar-diode bias-treatment in DC-plasma hetero-epitaxial diamond growth on Ir(001)
AU - Aoyama, T.
AU - Amano, N.
AU - Goto, T.
AU - Abukawa, T.
AU - Kono, S.
AU - Ando, Y.
AU - Sawabe, A.
N1 - Funding Information:
This work is supported in part by the Advanced Diamond Device Project administered by NEDO, Japan and by a Grant-in-Aid for Young Scientists (B) (No. 17710089) from the Ministry of Education, Culture, Sports, Science and Technology, Japan and by CREST of Japan Science and Technology Corporation.
PY - 2007/3
Y1 - 2007/3
N2 - The effect of bias-treatment (BT) on Ir(001)/MgO(001) substrates in a newly invented planar-diode DC-plasma system has been characterized in-situ and ex-situ by X-ray photoelectron diffraction (XPD), XPS, LEED and SEM. Features of XPD patterns of C 1s core levels were in good agreement with those of three-electrode BT [Diamond Relat. Mater. 13 (2004) 2081], although the degrees of anisotropy of C 1s XPD were smaller. Thicknesses of carbon films estimated from intensity ratios of C 1s/Ir 4d5/2 (or 4f) XPS peaks were about 2 times larger than those of three-electrode BT. LEED patterns showed no diffraction spots after BT. As a result, we conclude that epitaxial diamond crystallites with the size of a few nm or so are embedded in a non-oriented carbon layer. In the cases where no finite anisotropy of C 1s XPD was observed, no epitaxial diamond grains were grown in post-CVD as revealed by ex-situ SEM. Thus, it is concluded that the anisotropy of C 1s XPD can be a useful measure of diamond nucleation by BT on Ir(001) substrates.
AB - The effect of bias-treatment (BT) on Ir(001)/MgO(001) substrates in a newly invented planar-diode DC-plasma system has been characterized in-situ and ex-situ by X-ray photoelectron diffraction (XPD), XPS, LEED and SEM. Features of XPD patterns of C 1s core levels were in good agreement with those of three-electrode BT [Diamond Relat. Mater. 13 (2004) 2081], although the degrees of anisotropy of C 1s XPD were smaller. Thicknesses of carbon films estimated from intensity ratios of C 1s/Ir 4d5/2 (or 4f) XPS peaks were about 2 times larger than those of three-electrode BT. LEED patterns showed no diffraction spots after BT. As a result, we conclude that epitaxial diamond crystallites with the size of a few nm or so are embedded in a non-oriented carbon layer. In the cases where no finite anisotropy of C 1s XPD was observed, no epitaxial diamond grains were grown in post-CVD as revealed by ex-situ SEM. Thus, it is concluded that the anisotropy of C 1s XPD can be a useful measure of diamond nucleation by BT on Ir(001) substrates.
KW - CVD hetero-epitaxial diamond
KW - Diamond growth and characterization
KW - Ir(001) substrate
KW - X-ray photoelectron diffraction
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U2 - 10.1016/j.diamond.2006.11.045
DO - 10.1016/j.diamond.2006.11.045
M3 - Article
AN - SCOPUS:33846794767
VL - 16
SP - 594
EP - 599
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 3
ER -