Characterization of oxide films on SiC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation

Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The structure of wet oxide/SiC C-face interface was compared with that of dry oxide/SiC C-face, as well as that of dry oxide/SiC Si-face, in order to clarify why a MOS device of SiC C-face achieved good electrical properties. The improvement in electrical properties was confirmed by AR-PES measurements, evidencing differences in binding energy between SiC and the Si4+ components in Si2p and valence band region, and in binding energy between SiC and the CHx components in C1s. The reason for the improvement in electrical property of MOS devices by use of SiC C-face are discussed in terms of depth profiles of oxide films calculated from the AR-PES results.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
    PublisherTrans Tech Publications Ltd
    Pages585-588
    Number of pages4
    ISBN (Print)0878499636, 9780878499632
    DOIs
    Publication statusPublished - 2005 Jan 1
    Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
    Duration: 2004 Aug 312004 Sep 4

    Publication series

    NameMaterials Science Forum
    Volume483-485
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
    CountryItaly
    CityBologna
    Period04/8/3104/9/4

    Keywords

    • (000-1) face
    • Bonding
    • Dry oxidation
    • Oxide/SiC interface
    • Photoelectron spectroscopy
    • Wet oxidation

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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