Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takata, Keisuke Kobayashi, Hiroshi Nohira, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    Wet and dry oxide films-4H-SiC epitaxial (0001̄) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.

    Original languageEnglish
    Article number053710
    JournalJournal of Applied Physics
    Volume100
    Issue number5
    DOIs
    Publication statusPublished - 2006

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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