Abstract
The structural defects in annealed chalcopyrite AgGaS2 single crystals grown by the vertical gradient freezing method were investigated using X-ray topography. Dislocations with Burgers vector of the type b = 1/2[111] moving on {112}, b = [001] on {010} and b = 〈100〉 on {010} were identified within the crystals, as distinct from the preferential activation of b = 1/2[311] dislocations on {112} in the related compound CuFeS2. Twins formed due to the motion of dislocations with pure screw character of b = 1/6 [111] on {112} were also observed as similarly found for CuFeS2.
| Original language | English |
|---|---|
| Pages (from-to) | 616-620 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 167 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 1996 Oct |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Yonenaga, I., Sumino, K., Niwa, E., & Masumoto, K. (1996). Characterization of native dislocations in chalcopyrite AgGaS2 by X-ray topography. Journal of Crystal Growth, 167(3-4), 616-620. https://doi.org/10.1016/0022-0248(96)00269-2