Characterization of native dislocations in chalcopyrite AgGaS₂ by X-ray topography

The structural defects in annealed chalcopyrite AgGaS₂ single crystals grown by the vertical gradient freezing method were investigated using X-ray topography. Dislocations with Burgers vector of the type b = 1/2[111] moving on {112}, b = [001] on {010} and b = 〈100〉 on {010} were identified within the crystals, as distinct from the preferential activation of b = 1/2[311] dislocations on {112} in the related compound CuFeS₂. Twins formed due to the motion of dislocations with pure screw character of b = 1/6 [111] on {112} were also observed as similarly found for CuFeS₂.