Characterization of MOVPE grown GaAs1-xN/GaAs multiple quantum wells emitting around 1.3-μm-wavelength region

P. Klangtakai, S. Sanorpim, K. Yoodee, W. Ono, F. Nakajima, Ryuji Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

GaAso0.949N0.051/GaAs multiple quantum wells (MQWs) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy (MOVPE). Strong photoluminescence (PL) emission around the 1.3-μm-wavelength region was observed without post-growth thermal annealing, which suggests an efficient electron confinement in the GaAso0.949N0.051/GaAs MQWs. After post-growth thermal annealing, blue-shift of PL peak energy was clearly observed. This PL blue-shift, induced by thermal annealing, can be described by diffusion of N out of the quantum well and homogenization of the N concentration fluctuation. Furthermore, a reduction of PL full width at half maximum (FWHM) suggests the more homogeneous N distribution. In addition, both the as-grown and annealed GaAso0.949N0.051/GaAs MQWs exhibit fairly flat and abrupt GaAsN/GaAs interfaces, which were confirmed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM) measurements. Based on PL results, it is evident that the band alignment of GaAsN/GaAs hetero-structure is a type-I band lineup. Adding N to GaAs mainly affects the conduction band (CB) states leading to a large conduction band offset (△Ec ∼ 550 meV). Our results show the potential for the fabrication of 1.3 μm GaAsN QW lasers on GaAs substrates.

Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages701-706
Number of pages6
DOIs
Publication statusPublished - 2007 Aug 28
Event2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand
Duration: 2007 Jan 162007 Jan 19

Publication series

NameProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Other

Other2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
CountryThailand
CityBangkok
Period07/1/1607/1/19

Keywords

  • GaAs
  • High resolution x-ray diffraction
  • III-V-nitrides
  • Laser diodes
  • Multiple quantum wells
  • Photoluminescence

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

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