TY - GEN
T1 - Characterization of MOVPE grown GaAs1-xN/GaAs multiple quantum wells emitting around 1.3-μm-wavelength region
AU - Klangtakai, P.
AU - Sanorpim, S.
AU - Yoodee, K.
AU - Ono, W.
AU - Nakajima, F.
AU - Katayama, Ryuji
AU - Onabe, K.
PY - 2007/8/28
Y1 - 2007/8/28
N2 - GaAso0.949N0.051/GaAs multiple quantum wells (MQWs) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy (MOVPE). Strong photoluminescence (PL) emission around the 1.3-μm-wavelength region was observed without post-growth thermal annealing, which suggests an efficient electron confinement in the GaAso0.949N0.051/GaAs MQWs. After post-growth thermal annealing, blue-shift of PL peak energy was clearly observed. This PL blue-shift, induced by thermal annealing, can be described by diffusion of N out of the quantum well and homogenization of the N concentration fluctuation. Furthermore, a reduction of PL full width at half maximum (FWHM) suggests the more homogeneous N distribution. In addition, both the as-grown and annealed GaAso0.949N0.051/GaAs MQWs exhibit fairly flat and abrupt GaAsN/GaAs interfaces, which were confirmed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM) measurements. Based on PL results, it is evident that the band alignment of GaAsN/GaAs hetero-structure is a type-I band lineup. Adding N to GaAs mainly affects the conduction band (CB) states leading to a large conduction band offset (△Ec ∼ 550 meV). Our results show the potential for the fabrication of 1.3 μm GaAsN QW lasers on GaAs substrates.
AB - GaAso0.949N0.051/GaAs multiple quantum wells (MQWs) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy (MOVPE). Strong photoluminescence (PL) emission around the 1.3-μm-wavelength region was observed without post-growth thermal annealing, which suggests an efficient electron confinement in the GaAso0.949N0.051/GaAs MQWs. After post-growth thermal annealing, blue-shift of PL peak energy was clearly observed. This PL blue-shift, induced by thermal annealing, can be described by diffusion of N out of the quantum well and homogenization of the N concentration fluctuation. Furthermore, a reduction of PL full width at half maximum (FWHM) suggests the more homogeneous N distribution. In addition, both the as-grown and annealed GaAso0.949N0.051/GaAs MQWs exhibit fairly flat and abrupt GaAsN/GaAs interfaces, which were confirmed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM) measurements. Based on PL results, it is evident that the band alignment of GaAsN/GaAs hetero-structure is a type-I band lineup. Adding N to GaAs mainly affects the conduction band (CB) states leading to a large conduction band offset (△Ec ∼ 550 meV). Our results show the potential for the fabrication of 1.3 μm GaAsN QW lasers on GaAs substrates.
KW - GaAs
KW - High resolution x-ray diffraction
KW - III-V-nitrides
KW - Laser diodes
KW - Multiple quantum wells
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=34548137703&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34548137703&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2007.352115
DO - 10.1109/NEMS.2007.352115
M3 - Conference contribution
AN - SCOPUS:34548137703
SN - 1424406102
SN - 9781424406104
T3 - Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
SP - 701
EP - 706
BT - Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
T2 - 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Y2 - 16 January 2007 through 19 January 2007
ER -